SQM40N10-30_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
2.5
100
I_D = 15 A
2.1
10
V_GS = 10 V
1.7
1
T_J = 150 °C
1.3
0.1
SQM40N10-30
Vishay Siliconix
T_J = 25 °C
0.9
0.01
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.12
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.8
0.09
0.06
0.03
T_J = 150 °C
T_J = 25 °C
0.3
- 0.2
- 0.7
- 1.2
I_D = 5 mA
I_D = 250 μA
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
130
I_D = 10 mA
124
- 1.7
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
118
112
106
100
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1873-Rev. D, 10-Aug-15
4
Document Number: 64716
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