SQM200N04-1M8_15 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
2.0
I_D = 120 A
8
V_DS = 20 V
I_D = 30 A
1.7
6
1.4
SQM200N04-1m8
Vishay Siliconix
V_GS = 10 V
4
1.1
2
0.8
0
0
100
50
100
150
200
250
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.010
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.008
0.006
0.004
T_J = 150 °C
0.002
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.7
54
I_D = 10 mA
0.2
52
50
-0.3
I_D = 5 mA
48
-0.8
46
-1.3
I_D = 250 μA
44
-1.8
-50 -25 0 25 50 75 100 125 150 175
42
-50 -25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. B, 10-Aug-15
4
Document Number: 67184
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