SQJ960EP_15 Datasheet, PDF (4/12 Pages) Vishay Siliconix – Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
2.0
8
I_D = 4.5 A
V_DS = 30 V
I_D = 5.3 A
1.7
6
1.4
SQJ960EP
Vishay Siliconix
V_GS = 10 V
V_GS = 4.5 V
4
1.1
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
100
10
T_J = 150 °C
1
0.8
0.5
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
0.20
0.15
0.1
0.01
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.10
0.05
0.00
0
T_J = 25 °C
2
4
T_J = 150 °C
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
0.0
-0.3
I_D = 5 mA
-0.6
I_D = 250 μA
-0.9
75
72
I_D = 1 mA
69
66
63
-1.2
-50 -25
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
60
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1878-Rev. D, 17-Aug-15
4
Document Number: 67017
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000