SQJ952EP_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
I_D = 4.5 A
V_Ds = 30 V
8
2.5
I_D = 10.3 A
2.1
6
1.7
4
1.3
SQJ952EP
Vishay Siliconix
V_GS = 10 V
V_GS = 4.5 V
2
0.9
0
0
100
10
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.15
0.12
1
0.09
0.1
0.01
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.06
0.03
T_J = 150 °C
0.00
T_J = 25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
0.0
- 0.3
- 0.6
- 0.9
I_D = 5 mA
I_D = 250 μA
80
I_D = 1 mA
76
72
68
64
- 1.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
60
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1221-Rev. A, 21-May-15
4
Document Number: 62862
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000