SQJ465EP Datasheet, PDF (4/10 Pages) Vishay Siliconix – Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQJ465EP
Vishay Siliconix
10
I_D = 5 A
8
V_DS = 30 V
6
4
2.1
I_D = 3.5 A
1.8
1.5
1.2
V_GS = 10 V
V_GS = 4.5 V
2
0.9
0
0
100
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.5
10
0.4
T_J = 150 °C
1
0.3
0.1
0.01
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.9
0.7
I_D = 250 μA
0.5
0.3
I_D = 5 mA
0.1
- 0.1
- 0.3
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
0.2
T_J = 150 °C
0.1
0.0
0
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 60
I_D = 1 mA
- 64
- 68
- 72
- 76
- 80
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-1529-Rev. A, 08-Aug-11
4
Document Number: 67996
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