SQJ456EP-T1-GE3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQJ456EP
Vishay Siliconix
100
0.25
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.6
0.2
- 0.2
- 0.6
I_D = 5 mA
- 1.0
- 1.4
I_D = 250 µA
- 1.8
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
135
I_D = 1 mA
128
0.20
0.15
0.10
0.05
T_J = 150 °C
0.00
T_J = 25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to Source Voltage
80
64
T_C = - 55 °C
48
T_C = 25 °C
32
16
T_C = 125 °C
0
0
5
10
15
20
25
I_D - Drain Current (A)
Transconductance
121
114
107
100
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2288-Rev. F, 28-Nov-11
4
Document Number: 65279
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