SQJ412EP_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQJ412EP
Vishay Siliconix
2.0
100
I_D = 15 A
1.7
V_GS = 10 V
10
1.4
1
T_J = 150 °C
V_GS = 4.5 V
1.1
0.1
T_J = 25 °C
0.8
0.01
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.5
0.04
0.1
0.03
0.02
0.01
T_J = 150 °C
0
T_J = 25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
I_D = 1 mA
48
- 0.3
- 0.7
- 1.1
I_D = 5 mA
I_D = 250 μA
- 1.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
46
44
42
40
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. C, 13-Aug-12
4
Document Number: 65935
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