SQJ403EEP_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
I_D = 10 A
8
V_DS = 10 V
6
2.0
I_D = 10 A
1.7
1.4
4
1.1
SQJ403EEP
Vishay Siliconix
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.10
0.08
0.06
0.04
0.02
T_J = 25 °C
0.00
0
T_J = 150 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.7
I_D = 250 μA
0.4
I_D = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
- 28
I_D = 1 mA
- 30
- 32
- 34
- 36
- 38
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0024-Rev. B, 14-Jan-13
4
Document Number: 67076
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000