SQD45P03-12_15 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Automotive P-Channel 30 V (D-S) 175 °C MOSFETnull

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
0.10
10
I_D = 45 A
0.08
8
0.06
6
SQD45P03-12
Vishay Siliconix
V_DS = 15 V
0.04
4
0.02
T_J = 150 °C
0.00
0
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
5000
2
0
0
1.1
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
4000
C_iss
3000
2000
1000
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
- 30
- 32
0.8
I_D = 250 µA
0.5
I_D = 5 mA
0.2
- 0.1
- 0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
I_D = 10 mA
- 34
- 36
- 38
- 40
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2095-Rev. C, 03-Sep-12
4
Document Number: 65549
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000