SQD35N05-26L Datasheet, PDF (4/7 Pages) Vishay Siliconix – Automotive N-Channel 55 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQD35N05-26L
Vishay Siliconix
1500
1200
C_iss
900
600
300
C_oss
C_rss
0
0 5 10 15 20 25 30 35 40 45 50 55
V_DS - Drain-to-Source Voltage (V)
Capacitance
0.20
0.16
0.12
0.08
0.04
T_J = 150 °C
0.00
T_J = 25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
70
67
6
I_D = 35 A
5
4
V_DS = 25 V
3
2
1
0
0
0.6
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.3
0
- 0.3
- 0.6
- 0.9
I_D = 5 mA
I_D = 250 µA
- 1.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
I_D = 1 mA
64
61
58
55
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2046-Rev. D, 24-Oct-11
4
Document Number: 68839
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