SQD100N04-3M6_15 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQD100N04-3m6
Vishay Siliconix
2.0
I_D = 20 A
1.7
1.4
1.1
V_GS = 10 V
V_GS = 6 V
100
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.8
0.01
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.03
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.7
0.2
0.02
- 0.3
I_D = 5 mA
- 0.8
0.01
I_D = 250 μA
T_J = 150 °C
- 1.3
0
T_J = 25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
54
52
- 1.8
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
I_D = 10 mA
50
48
46
44
42
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2943-Rev. A, 10-Dec-12
4
Document Number: 63836
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