SQ4282EY_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
8
I_D = 11 A
2.0
I_D = 15 A
1.7
6
1.4
4
1.1
SQ4282EY
Vishay Siliconix
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
100
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.0010.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.7
0.3
- 0.1
- 0.5
I_D = 5 mA
0.08
0.06
0.04
0.02
T_J = 150 °C
0.00
0
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
I_D = 1 mA
38
36
34
- 0.9
I_D = 250 μA
32
- 1.3
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
30
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2200-Rev. B, 24-Sep-12
4
Document Number: 63582
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