SQ2362ES Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
I_D = 2.4 A
8
2.5
I_D = 3.9 A
2.0
6
1.5
4
1.0
2
SQ2362ES
Vishay Siliconix
V_GS = 10 V
V_GS = 4.5 V
0
0.0
2.0
4.0
6.0
8.0
Q_g - Total Gate Charge (nC)
10.0
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.25
0.20
0.15
0.10
T_J = 150 °C
0.05
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
- 0.1
- 0.4
I_D = 5 mA
I_D = 250 μA
85
I_D = 1 mA
81
77
73
- 0.7
69
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
65
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S15-1820-Rev. A, 10-Aug-15
4
Document Number: 62913
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