SQ2303ES_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
2.0
100
I_D = 1.7 A
1.7
10
V_GS = 10 V
1.4
1
V_GS = 4.5 V
1.1
0.1
0.8
0.01
T_J = 150 °C
SQ2303ES
Vishay Siliconix
T_J = 25 °C
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.0
0.001
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.0
0.8
0.6
0.4
T_J = 150 °C
0.2
T_J = 25 °C
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 30
I_D = 1 mA
- 32
0.7
I_D = 250 μA
0.4
I_D = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
- 34
- 36
- 38
- 40
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2111-Rev. B, 07-Nov-11
4
Document Number: 67023
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