SMB10J30A-E3 Datasheet, PDF (4/6 Pages) Vishay Siliconix – High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors

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SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
100
10 000
Measured at
Zero Bias
10
SMB10J5.0 -
SMB10J40A
1
0.2 x 0.2" (5.0 x 5.0 mm) ^{SMB8J5.0C -}
Copper Pad Areas
SMB8J40CA
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
t_d - Pulse Width (s)
10 ms
Fig. 1 - Peak Pulse Power Rating Curve
1000
100
10
1
V_R, Measured at
Stand-Off
Voltage V_WM
Bi-Directional
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
100 200
V_WM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
100
75
50
10
25
0
0 25 50 75 100 125 150 175 200
T_J - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
t_r = 10 µs
T_J = 25 °C
Pulse Width (t_d)
is defined as the Point
100
Peak Value
I_PPM
where the Peak Current
decays to 50 % of I_PPM
Half Value - I_PP
I_PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t_d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
1.0
0.01
0.1
1
10
100
1000
t_p - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 12-Nov-12
4
Document Number: 88422
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