SISA34DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_J = 25 °C, unless otherwise noted)
100
0.05
10
0.04
T_J = 150 °C
1
T_J = 25 °C
0.03
SiSA34DN
Vishay Siliconix
I_D = 10 A
0.1
0.01
0.001
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.2
40
- 0.1
I_D = 5 mA
30
- 0.4
20
I_D = 250 μA
- 0.7
10
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I_DM Limited
10 ^ID ^Limited
100 μs
1
Limited by R_DS(on)*
1 ms
10 ms
100 ms
0.1
0.01
0.01
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-1338-Rev. A, 30-Jun-14
4
Document Number: 64899
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000