SIS334DN Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SiS334DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
10
T_J = 150 °C
T_J = 25 °C
1
0.04
0.03
I_D = 10 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.2
40
0
30
- 0.2
I_D = 5 mA
20
- 0.4
I_D = 250 μA
10
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
Time (s)
100
1000
Single Pulse Power (Junction-to-Ambient)
100
I_DM Limited
10 ^{ID Limited}
100 μs
1 ms
1
Limited by R_DS(on)*
10 ms
100 ms
0.1
1s
10 s
T_C = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63371
4
S11-1659-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000