SIR882DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

New Product
SiR882DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.05
I_D = 20 A
0.04
0.03
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
200
0.2
160
0.0
120
- 0.2
I_D = 5 mA
80
- 0.4
I_D = 250 μA
40
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.01
0.1
1s
10 s
BVDSS Limited _DC
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10