SIR864DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
SiR864DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.015
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.012
0.009
0.006
I_D = 15 A
T_J = 125 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.003
T_J = 25 °C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
250
0.2
200
- 0.1
- 0.4
- 0.7
150
I_D = 5 mA
100
I_D = 250 μA
50
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66820
S10-2007-Rev. A, 06-Sep-10