SIR802DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
SiR802DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.025
T_J = 150 °C
10
0.020
1
T_J = 25 °C
0.015
I_D = 10 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
I_D = 250 µA
0.1
0.010
0.005
T_J = 125 °C
T_J = 25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
120
- 0.1
- 0.3
90
I_D = 5 mA
60
- 0.5
30
- 0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
BVDSS
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65671
S10-0217-Rev. A, 25-Jan-10