SIJA54DP Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiJA54DP
Vishay Siliconix
100
10
1
0.1
0.01
Axis Title
10000
T_J = 150 °C
T_J = 25 °C
1000
100
0.01
0.008
0.006
0.004
0.002
Axis Title
I_D = 15 A
10000
1000
T_J = 25 °C
T_J = 125 °C
100
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0
10
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
0.2
1000
-0.1
I_D = 5 mA
-0.4
100
I_D = 250 μA
-0.7
-1.0
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
200
10000
160
1000
120
80
100
40
0
0.001
0.01
0.1
1
Time (s)
2nd line
10
10
Single Pulse Power, Junction-to-Ambient
1000
100
I_DM limited
I_D limited
10
Axis Title
10000
100 μs
1000
1 ms
Limited by R_DS(on) ⁽¹⁾
1
10 ms
100 m¹s⁰⁰
0.1
T_a = 25 °C
Single pulse
0.01
0.01
0.1
BVDSS limited
1
10
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-0748-Rev. A, 25-Apr-16
4
Document Number: 67424
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