SIHW61N65EF Datasheet, PDF (4/7 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode

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SiHW61N65EF
Vishay Siliconix
24
V_DS = 520 V
V_DS = 325 V
20
V_DS = 130 V
16
12
8
4
0
0
90
180
270
360
450
Q_g, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100
T_J = 150 °C
10
T_J = 25 °C
1
V_GS = 0 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
60
40
20
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
850
825
800
775
750
725
700
675
650
-60 -40 -20 0
I_D = 10 mA
20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Operation in this Area
Limited by R_DS(on)
100
I_DM Limited
Limited by R_DS(on)*
10
100 μs
1 ms
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
1
10
10 ms
BVDSS Limited
100
1000
V_DS, Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S17-0296-Rev. B, 27-Feb-17
4
Document Number: 91878
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