SIHW30N60E Datasheet, PDF (4/8 Pages) Vishay Siliconix – Reduced switching and conduction losses

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I_D = 15 A
20
16
12
V_DS = 300 V
V_DS = 120 V
V_DS = 480 V
8
4
0
0
25
50
75
100 125 150
Q_g - Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
T_J = 150 °C
10
1
T_J = 25 °C
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
1000
100
Operation in this area
limited by R_DS(on)
I_DM Limited
SiHW30N60E
Vishay Siliconix
30.0
25.0
20.0
15.0
10.0
5.0
0
25
50
75
100
125
150
T_C - Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
725
700
675
650
625
600
575
550
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J - Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
10
100 μs
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
1 ms
10 ms
BVDSS Limited
0.1
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S14-1277- Rev. C, 23-Jun-14
4
Document Number: 91525
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000