SIHP12N50C Datasheet, PDF (4/8 Pages) Vishay Siliconix – 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC

SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
2400
2000
1600
1200
V_GS = 0 V, f = 1MHz
C_iss = C_gs +C_gd C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
800
C_oss
400
C_rss
0
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.2 0.4 0.6 0.8 1
V_GS = 0 V
1.2 1.4 1.6
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
24
I_D = 12 A
20
16
V_DS = 400 V
V_DS = 250 V
V_DS = 100 V
12
8
4
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY R_DS(on)
10
100 µs
1 ms
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
10
100
10 ms
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D²PAK)
100
OPERATION IN THIS AREA
LIMITED BY R_DS(on)
10
100 µs
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4
1 ms
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
10
100
10 ms
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10