SIHH21N60E Datasheet, PDF (4/9 Pages) Vishay Siliconix – Reduced switching and conduction losses

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SiHH21N60E
Vishay Siliconix
24
V_DS = 480 V
V_DS = 300 V
20
V_DS = 120 V
16
12
8
4
0
0
30
60
90
120
Q_g, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
T_J = 150 °C
T_J = 25 °C
1
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by R_DS(on)
10
1
Limited by R_DS(on)*
I_DM Limited
100 μs
1 ms
0.1
0.01
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
10 ms
BVDSS Limited
10
100
1000
V_DS, Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Fig. 9 - Maximum Safe Operating Area
20
15
10
5
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
800
775
750
725
700
675
650
625
I_D = 250 μA
600
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
S15-2031-Rev. A, 24-Aug-15
4
Document Number: 91584
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