SIHG17N60D Datasheet, PDF (4/8 Pages) Vishay Siliconix – D Series Power MOSFET

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100
T_J = 150 °C
10
T_J = 25 °C
1
20.00
15.00
10.00
5.00
SiHG17N60D
Vishay Siliconix
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
I_DM Limited
OPERATION IN THIS AREA
Limited by R_DS(on)
10
Limited by R_DS(on)
100 μs
1 ms
1
10 ms
T_C= 25 °C
T_J= 150 °C
Single Pulse
0.1
1
10
BVDSS Limited
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Fig. 8 - Maximum Safe Operating Area
1
0.00
25
50
75
100
125
150
T_J - Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
725
700
675
650
625
600
575
550
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J,Temperature (°C)
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S12-0685-Rev. A, 02-Apr-12
4
Document Number: 91496
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