SIHB12N50E Datasheet, PDF (4/9 Pages) Vishay Siliconix – E Series Power MOSFET

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24
V_DS = 400 V
V_DS = 250 V
20
V_DS = 100 V
16
12
8
4
0
0
10
20
30
40
50
Q_g, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100
T_J = 150 °C
10
1
T_J = 25 °C
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by R_DS(on)
I_DM Limited
10
Limited by R_DS(on)*
1
100 μs
1 ms
0.1
0.01
1
T_C = 25 °C
T_J = 150 °C
Single Pulse
10 ms
BVDSS Limited
10
100
1000
V_DS, Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Fig. 9 - Maximum Safe Operating Area
SiHB12N50E
Vishay Siliconix
12
9
6
3
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
650
625
600
575
550
525
500
475
- 60 - 40 - 20 0
I_D = 250 μA
20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
S15-0278-Rev. B, 23-Feb-15
4
Document Number: 91632
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