SIE818DF Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
0.025
T_J = 150 °C
T_J = 25 °C
10
0.020
0.015
0.010
125 °C
25 °C
I_D = 16 A
0.005
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.6
2.4
I_D = 250 µA
2.2
2.0
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.000
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
100 µs
10
1 ms
10 ms
1
T_A = 25 °C
Single Pulse
0.1
100 ms
1s
10 s
BVDSS Limited
DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74485
S09-1338-Rev. B, 13-Jul-09