SIB417EDK Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 1.2-V (G-S) MOSFET

SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
0.16
10
0.12
I_D = 5.8 A
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
5000
4000
3000
2000
1000
I_GSS at 25 °C
0
012345678
V_GS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
0.7
0.08
T_J = 125 °C
0.04
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10 000
1000
100
10
1
I_GSS at 150 °C
0.1
0.01
I_GSS at 25 °C
0.001
0.1
1
10
V_GS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
20
0.6
15
I_D = 250 µA
0.5
10
0.4
5
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09