SIA450DJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 240-V (D-S) MOSFET

SiA450DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
T_J = 150 °C
1
6
T_J = 25 °C
0.1
4
0.01
2
I_D = 0.70 A
T_A = 125 °C
T_A = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
2.1
I_D = 250 µA
1.8
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
1.5
15
1.2
10
0.9
5
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by R_DS(on)*
1
10 ms
0.1
100 ms
1s
10 s
0.01
DC
T_A = 25 °C
Single Pulse
0.001
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73603
S-80436-Rev. C, 03-Mar-08