SI7856DP Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7856DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
200
0.4
I_D = 250 mA
160
0.2
120
–0.0
Single Pulse Power
–0.2
80
–0.4
40
–0.6
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 50_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05 _0.02
0.01
10^–4
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4
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71850
S-20351—Rev. A, 18-Apr-02