SI7846DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
100
Avalanche Current vs. Time
0.5
I_D = 250 mA
0.0
T = 25_C
10
- 0.5
T = 125_C
1
- 1.0
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0.1
10 ^{- 5}
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Time (sec)
Single Pulse Power, Juncion-to-Ambient
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 52_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71442
S-31728—Rev. B, 18-Aug-03