SI7439DP-T1 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

Si7439DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.3
200
1.0
160
0.7
I_D = 250 µA
120
0.4
80
0.1
- 0.2
40
- 0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by
R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
1
10 ms
0.1
T_C = 25 °C
Single Pulse
100 ms
1s
10 s
0.01
DC
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P _DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 50 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73106
S10-2246-Rev. E, 04-Oct-10