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SI7336DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET | |||
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Si7336DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
0.2
ID = 250 mA
160
â0.0
120
â0.2
Single Pulse Power
â0.4
80
â0.6
â0.8
40
â1.0
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by rDS(on)*
10
1 ms
10 ms
1
0.1
TC = 25_C
Single Pulse
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.01
0.1
1
10
100
VDS â Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72415
S-41795âRev. C, 04-Oct-04
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