SI7326DN Datasheet, PDF (4/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7326DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.2
40
I_D = 250 µA
0.0
30
- 0.2
20
- 0.4
10
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 74444
S-83051-Rev. C, 29-Dec-08