SI7322DN Datasheet, PDF (4/13 Pages) Vishay Telefunken – N-Channel 100-V (D-S) MOSFET

Si7322DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.16
T_J = 150 °C
0.12
10
0.08
0.04
I_D = 5.5 A
T_A = 125 °C
T_A = 25 °C
1
0
3.8
T_J = 25 °C
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.4
I_D = 250 µA
3.0
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
2.6
20
2.2
10
1.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
10 ^{Limited by RDS(on)*}
100 µs
1
0.1
0.01
T_A = 25 °C
Single Pulse
BVDSS
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69638
S-81549-Rev. B, 07-Jul-08