SI7114ADN Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7114ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.020
10
T_J = 150 °C
1
T_J = 25 °C
0.015
0.010
0.005
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.3
2.0
I_D = 250 µA
1.7
1.4
1.1
0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.000
0
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
50
40
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100 µs
1
0.1
T_A = 25 °C
Single Pulse
1 ms
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68932
S-82616-Rev. B, 03-Nov-08