SI6928DQ Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – Dual 30V N-Channel PowerTrench MOSFET

Si6928DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.12
10
T_J = 150 °C
0.09
I_D = 4.0 A
0.06
T_J = 25 °C
0.03
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.3
I_D = 250 µA
0.0
- 0.3
- 0.6
0
1
3
5
7
9
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
32
24
16
8
- 0.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
Time (s)
Single Pulse Power
10 30
0.2
Notes:
0.1
P_DM
0.1
0.05
0.02
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 125 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
0.0110_-4
10^-3
10^-2
10^-1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70663.
www.vishay.com
4
Document Number: 70663
S-81056-Rev. D, 12-May-08