SI6463BDQ Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6463BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
Single Pulse Power, Junction-to-Ambient
160
0.2
I_D = 250 mA
120
0.0
80
-0.2
40
-0.4
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Time (sec)
100
Limited
by r_DS(on)
10
Safe Operating Area, Junction-to-Case
1 ms
1
0.1
0.01
0.1
T_C = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 100_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72018
S-21782—Rev. A, 07-Oct-02