SI5903DC-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 2.5 V (G-S) MOSFET

Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.3
40
I_D = 250 µA
0.2
30
0.1
20
0.0
- 0.1
10
- 0.2
- 50 - 25
2
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
10^-4 10^-3
10^-2 10^-1
1
10
Time (s)
Single Pulse Power
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
2
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90 °C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71054.
www.vishay.com
4
Document Number: 71054
S10-0547-Rev. C, 08-Mar-10