SI5482DU Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si5482DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
T_J = 150 °C
10
T_J = 25 °C
0.040
0.035
0.030
0.025
0.020
I_D = 7.4 A
T_A = 125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.015
T_A = 25 °C
0.010
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.4
50
1.2
40
I_D = 250 µA
1.0
30
0.8
20
0.6
10
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
BVDSS Limited
100 µs
10
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73594
S-81448-Rev. B, 23-Jun-08