English
Language : 

SI5435BDC Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
◁
Si5435BDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
0.5
0.4
ID = 250 mA
40
0.3
30
0.2
0.1
20
−0.0
−0.1
10
−0.2
−0.3
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
Single Pulse Power
10−2
10−1
1
10
Time (sec)
Safe Operating Area
100
*rDS(on) Limited
IDM Limited
P(t) = 0.0001
10
100 600
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
TC = 25_C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73137
S-41887—Rev. A, 18-Oct-04
 ▷