SI5419DU Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

Si5419DU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.06
I_D = 6.6 A
0.05
0.04
10
0.03
T_J = 150 °C
T_J = 25 °C
0.02
0.01
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.0
40
I_D = 250 µA
1.8
30
1.6
20
1.4
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
100 1000
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 69001
S11-0184-Rev. B, 07-Feb-11