SI5406CDC Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

Si5406CDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
0.03
10
T_J = 150 °C
T_J = 25 °C
0.02
0.01
I_D = 6.5 A
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
0.3
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
50
40
30
20
10
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
100 ms
1s
10 s
0.1
DC
T_A = 25 C
Single Pulse
0.01
BVDSS
Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
100 600
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4
Document Number: 68609
S-80795-Rev. A, 14-Apr-08