SI4948EY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual P-Channel 60-V (D-S), 175C MOSFET

Si4948EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.5
10
T_J = 175_C
T_J = 25_C
0.4
0.3
I_D = 3.1 A
0.2
0.1
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.75
0.50
0.25
I_D = 250 mA
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
T_C = 25_C
Single Pulse
40
30
20
10
–0.25
–50 –25 0 25 50 75 100 125 150 175
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70166
S-99444—Rev. E, 29-Nov-99