SI4922BDY Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
150 °C
10
0.06
I_D = 5 A
25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
I_D = 250 µA
0.2
0.04
125 °C
0.02
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
0.0
60
- 0.2
40
- 0.4
20
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
10 µs
1
100 µs
1 ms
0.1
10 ms
T_A = 25 °C
100 ms
Single Pulse
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_DS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09