SI4920DY-T1-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4920DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
30
20
0.08
10
T_J = 150 °C
T_J = 25 °C
0.06
0.04
0.02
I_D = 6.9 A
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
2
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
T_C = 25 °C
25
Single Pulse
20
15
10
5
0
0.01
0.10
1.00
Time (s)
Single Pulse Power
10.00
0.2
Notes:
0.1
0.1
0.05
0.02
0.01
10^-4
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 62.5 °C/W
3. T _JM - T _A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70667.
www.vishay.com
4
Document Number: 70667
S09-0767-Rev. E, 04-May-09