SI4904DY Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 40-V MOSFET

Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
20
T_J = 150 °C
0.08
10
I_D = 5 A
T_J = 25 °C
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
I_D = 250 µA
0.2
0 _{ID = 5 mA}
- 0.2
- 0.4
- 0.6
0.06
0.04
T_A = 125 °C
0.02
T_A = 25 °C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
1s
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09