SI4880DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4880DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.10
On-Resistance vs. Gate-to-Source Voltage
0.08
10
T_J = 150_C
T_J = 25_C
0.06
I_D = 13 A
0.04
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0
60
50
40
30
20
10
0
0.01
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
www.vishay.com S FaxBack 408-970-5600
2-4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 70857
S-60711—Rev. A, 01-Feb-99