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SI4688DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
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Si4688DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
30
0.2
24
ID = 250 µA
0.0
18
- 0.2
12
- 0.4
6
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
10- 2
10- 1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
IDM Limited
2
1
Duty Cycle = 0.5
10
1 ms
ID(on)
1 Limited
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
* VGS
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Single Pulse
10- 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 71 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 69996
S09-0394-Rev. B, 09-Mar-09
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